Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation
نویسندگان
چکیده
Sulfide-passivated GaAs and InP wafers were directly bonded to explore the efficiency of sulfide passivation on the bonded interfacial properties. We find that the bonded GaAs/InP interfaces after sulfide passivation contain sulfur atoms and a decreased amount of oxide species relative to the pairs bonded after conventional acid treatment; however, the residual sulfur atoms have no effect on the bonding strength. The electrical properties of the bonded p-GaAs /n-InP heterojunctions were studied for different acceptor concentrations in p-GaAs. A reduced interfacial trap state density enhances the tunnel current flow across the depletion layer in the sulfide-passivated case. A directly bonded tunnel diode with a heavily doped p-GaAs /n-InP heterojunction was achieved when the wafers were sulfide passivated and then bonded at temperatures as low as 300 °C. This sulfide-passivated tunnel diode can be used for fabrication of lattice-mismatched multijunction solar cells in which subcells are integrated via direct bonding. © 2008 American Institute of Physics. DOI: 10.1063/1.2912717
منابع مشابه
Growth and surface passivation of near-surface InGaAs quantum wells
The growth and surface passivation of near-surface InGaAs quantum wells (QWs) on GaAs (1 1 0) substrate have been investigated. Triangular shaped small islands, approximate areal density of 10 cm , are observed on metal organic vapor phase epitaxially grown GaAs single layer and InGaAs multi-quantum wells (MQWs) surfaces in a wide range of growth temperatures. By optimizing the growth condition...
متن کاملLow-Cost High-Efficiency Solar Cells
III-V compound multijunction solar cells enable ultrahigh efficiency performance in designs where subcells with high material quality and high internal quantum efficiency can be employed. However the optimal multijunction cell bandgap sequence cannot be achieved using lattice-matched compound semiconductor materials. Most current compound semiconductor solar cell design approaches are focused o...
متن کاملمطالعه نوارهای انرژی GaAs نوع n و InP نوع p با روشهای طیفنمایی تراگسیلی ونورالیانی
نوارهای طیفی بلورهای دوتاییGaAs
متن کاملHydrogen sulfide plasma passivation of gallium arsenide
Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 “C plasma enhanced chemical vapor deposition (PECVD) SiO, film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiOz cap. Improved C-V characteristics were...
متن کاملTransmission Electron Microscopy Studies of Electrical Active GaAs/GaN Interface Obtained by Wafer Bonding
Transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) studies of GaAs/GaN interfaces, obtained by direct wafer bonding, are presented. TEM observations show that most of the interface area was well bonded. A thin oxide layer, confirmed by EDX, was present at the interface in the well-bonded regions. Plan-view TEM studies showed the presence of two dislocation net...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2007